Preparing GaN nanowires on Al₂O₃ substrate without catalyst and its optical property

Optical study of GaN nanowires and GaN/AlN microcavities

This work focuses on the optical study of GaN nanowires and AlN microcavities containingGaN quantum dots. The 1-meV linewidth of the neutral donor-bound exciton line in thephotoluminescence spectrum of MBE-grown GaN nanowires evidences that the strain ishomogeneous in the material. These nanowires do not exhibit any excitonic confinement, butthe efficient strain relaxation allow...

Position-Controllable Ge Nanowires Growth on Patterned Au Catalyst Substrate

Chuanbo Li , Kouichi Usami, Gento Yamahata, Yoshishige Tsuchiya, Hiroshi Mizuta, and Shunri Oda Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Tokyo 152-8552, Japan School of Electronics and Computer Science, University of Southampton, Highfield, Southampton, Hampshire, SO17 1BJ, U.K. Department of Physical Electronics, Tokyo Institute of Technology, Tokyo 152-8552, Jap...

Catalyst-free growth of high-optical quality GaN nanowires by metal- organic vapor phase epitaxy

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Optical properties of functionalized GaN nanowires

GaN Nanowires on N-Polar GaN

In this work, the position-controlled growth of GaN nanowires on sapphire wafers and on N-polar GaN templates is presented using selective area vapor-liquid-solid growth in a metalorganic vapor phase reactor. Misoriented sapphire wafers and TMIn acting as surfactant are applied in order to achieve N-polar GaN buffer layers with high crystal and surface quality, suitable for a subsequent nano-pa...